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| SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1 * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers * Stepper motor driver PARTMARKING DETAIL ZVN4206V ZVN4206GV D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb = 25C Continuous Body Diode Current at T amb = 25C Avalanche Current - Repetitive Avalanche Energy - Repetitive Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot I SD I AR E AR T j:T stg VALUE 60 1 8 20 2 600 600 15 -55 to +150 UNIT V A A V W mA mA mJ C ZVN4206GV ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 300 100 60 20 8 12 12 15 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD 25V, I D=1.5A, V GEN =10V V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60V, V GS=0V V DS=48V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V, I D=1.5A V GS=5V, I D=0.5A V DS=25V,I D=1.5A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ZVN4206GV TYPICAL CHARACTERISTICS 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 2 6V 5V 4.5V 4V 3.5V 50 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V 10 ID - Drain Current (Amps) 6 ID - Drain Current (Amps) 8 8 6 4 4 2 0 0 10 20 30 40 0 2 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics VDS-Drain Source Voltage (Volts) 10 ID - Drain Current (Amps) 6 VDS=10V 4 8 6 4 ID= 3A 1.5A 0.5A 0 2 4 6 8 10 2 2 0 0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance () Transfer Characteristics VGS=3.5V 10 4.5V 6V 8V 10V 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 e eR rc ou -S ain Dr eR nc ta sis DS n) (o VGS=10V ID=1.5A 14V 1.0 20V VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 0.1 0.1 1.0 10 ID-Drain Current (Amps) Tj-Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) v Temperature ZVN4206GV TYPICAL CHARACTERISTICS 1000 1000 gfs-Transconductance (mS) 700 600 500 400 300 200 100 0 0 1 2 gfs-Transconductance (mS) 900 800 VDS=10V 900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VDS=10V 3 4 5 6 7 8 9 10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VDS= 20V 40V 60V ID=1.5A VGS-Gate Source Voltage (Volts) 200 16 14 12 10 8 6 4 2 0 C-Capacitance (pF) 160 120 80 Ciss 40 Coss 0 0 10 20 30 40 50 60 Crss 70 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage EAR- Repetative Avalance Energy (mJ) Tj - Junction Temperature (C) IAR- Repetative Avalance Current (A) Tj - Junction Temperature (C) Maximum repetative avalanche energy v Junction Temperature Maximum repetative avalanche current v Junction Temperature |
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